SEMICONDUCTOR DEVICE TO CONTROL INCREASE IN LEAKAGE CURRENT FLOWING BETWEEN GATE ELECTRODE AND DRAIN

PURPOSE: A semiconductor device is provided to control an increase in a leakage current flowing between a gate electrode and a drain by interposing a gate insulation layer, and to reduce the resistance of the gate electrode. CONSTITUTION: A semiconductor device includes an n-channel transistor. The...

Full description

Saved in:
Bibliographic Details
Main Author AIHARA KAZUHIRO
Format Patent
LanguageEnglish
Korean
Published 19.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: A semiconductor device is provided to control an increase in a leakage current flowing between a gate electrode and a drain by interposing a gate insulation layer, and to reduce the resistance of the gate electrode. CONSTITUTION: A semiconductor device includes an n-channel transistor. The first layer is formed on the gate insulation layer(4), composed of an n-type Ge semiconductor or an n-type SiGe mixed crystalline semiconductor(5). The second layer is formed on the first layer, composed of a p-type Ge semiconductor or a p-type mixed crystalline semiconductor(6). The gate electrode includes the first layer and the second layer. The gate electrode further includes a metal layer formed on the second layer.
Bibliography:Application Number: KR20030048782