APPARATUS FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE

PURPOSE: An apparatus for manufacturing a GaN substrate is provided to fabricate the GaN substrate of large area and to prevent particles by using a gas supply pipe with a plurality of openings. CONSTITUTION: A chamber(120) is provided with a gas outlet(126). The first gas supply pipe(121) is inject...

Full description

Saved in:
Bibliographic Details
Main Author LEE, SEOK U
Format Patent
LanguageEnglish
Korean
Published 04.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: An apparatus for manufacturing a GaN substrate is provided to fabricate the GaN substrate of large area and to prevent particles by using a gas supply pipe with a plurality of openings. CONSTITUTION: A chamber(120) is provided with a gas outlet(126). The first gas supply pipe(121) is injected NH3 gas into the chamber. The second gas supply pipe(122) is spaced apart from the first gas supply pipe to inject GaCl gas. A susceptor(124) is formed between the first and second gas supply pipes to mount a plurality of sapphire substrates(125a,125b,125c,125d,125e). A plurality of openings(128,129) are formed at the first and second gas supply pipes, respectively.
Bibliography:Application Number: KR20030005637