RAISED SOURCE/DRAIN SOI TRANSISTOR, AND CMOS DEVICE AND MANUFACTURING METHOD OF CMOS DEVICE USING ULTRA-THIN SOI(SILICON OVER INSULATOR) SUBSTRATE

• Main Authors: PARK HEE MYONG, SHAHIDI GHAVAM G, LEE BYOUNG HUN, AGNELLO PAUL D, SCHEPIS DOMINIC J
• Format: Patent
• Language: English; Korean
• Published: 14.07.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A raised source/drain SOI(Silicon Over Insulator) transistor, and a CMOS(Complementary Metal Oxide Semiconductor) device and a manufacturing method of CMOS device are provided to produce a CMOS device using an ultra-thin SOI substrate by forming a raised source/drain area using vaporization...