RAISED SOURCE/DRAIN SOI TRANSISTOR, AND CMOS DEVICE AND MANUFACTURING METHOD OF CMOS DEVICE USING ULTRA-THIN SOI(SILICON OVER INSULATOR) SUBSTRATE

• Main Authors: PARK HEE MYONG, SHAHIDI GHAVAM G, LEE BYOUNG HUN, AGNELLO PAUL D, SCHEPIS DOMINIC J
• Format: Patent
• Language: English; Korean
• Published: 14.07.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A raised source/drain SOI(Silicon Over Insulator) transistor, and a CMOS(Complementary Metal Oxide Semiconductor) device and a manufacturing method of CMOS device are provided to produce a CMOS device using an ultra-thin SOI substrate by forming a raised source/drain area using vaporization at a very low temperature. CONSTITUTION: A raised source/drain(RSD) SOI transistor includes a buried oxide(BOX) layer, an SOI wafer, a gate dielectric(25), a gate region on the gate dielectric, an implant layer(65), a source/drain region, and an STI(Shallow Trench Isolation) region(35). The SOI wafer is placed over the BOX layer. The gate dielectric is placed over the SOI wafer. The implant layer is adjacent to the SOI wafer and includes a vaporized material thereon. The source/drain region is placed on the implant layer and the SOI wafer. The STI region is adjacent to the source/drain region and has an upper surface that is higher than an upper surface of the gate dielectric.