A method for forming a self-aligned contact of a semiconductor device

PURPOSE: A method for forming an SAC(Self Aligned Contact) of a semiconductor device is provided to prevent degradation due to over-etch of an etch barrier layer in SAC processing. CONSTITUTION: A conductive line including a polysilicon layer(17) and a hard mask is formed on a substrate(11). A lower...

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Bibliographic Details
Main Author SEO, JAE BEOM
Format Patent
LanguageEnglish
Korean
Published 06.07.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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