SEMICONDUCTOR DEVICE PROVIDED WITH INTERCONNECTION STRUCTURE WITH STABLE ELECTRICAL RESISTANCE AND MANUFACTURING METHOD THEREOF
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a resistance of an interconnection by preventing a reaction result from remaining on a surface of a conductive film using an oxide film formed on the surface of the conductive film. CONSTITUTION: A semiconducto...
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| Main Author | |
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| Format | Patent |
| Language | English Korean |
| Published |
02.07.2004
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| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a resistance of an interconnection by preventing a reaction result from remaining on a surface of a conductive film using an oxide film formed on the surface of the conductive film. CONSTITUTION: A semiconductor device includes an interlayer dielectric(4) covering a first conductive film(3), a contact hole(5), an oxide film(9), and a second conductive film(6). The contact hole is provided in the interlayer dielectric and reaches the first conductive film. The oxide film is provided at a surface of the first conductive film located in the contact hole. The second conductive film is provided in the contact hole to surround the oxide film. |
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| AbstractList | PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a resistance of an interconnection by preventing a reaction result from remaining on a surface of a conductive film using an oxide film formed on the surface of the conductive film. CONSTITUTION: A semiconductor device includes an interlayer dielectric(4) covering a first conductive film(3), a contact hole(5), an oxide film(9), and a second conductive film(6). The contact hole is provided in the interlayer dielectric and reaches the first conductive film. The oxide film is provided at a surface of the first conductive film located in the contact hole. The second conductive film is provided in the contact hole to surround the oxide film. |
| Author | SAKAI KATSUHISA |
| Author_xml | – fullname: SAKAI KATSUHISA |
| BookMark | eNqNjL0KwkAQhFNo4d87LFgLwShqed5tzGJyJ3ubWIrIWUkUYu-re6IPYDUw3zczTHrtvQ2D5OWxIu2sqbU4BoMNaYQDu4YMGjiSFEBWkKNjUQs5C1442jXjF3tR2xIBy4iZtCqB0VNsbXxS1kClbJ2rz4LsDiqUwhmQAhldPk761_OtC5NfjpJpjqKLWXjcT6F7nC-hDc_TnudpukjT5Wq9yVT2n_UGLPc_TA |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| Edition | 7 |
| ExternalDocumentID | KR20040057893A |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_KR20040057893A3 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 11:29:37 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English Korean |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_KR20040057893A3 |
| Notes | Application Number: KR20030058185 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040702&DB=EPODOC&CC=KR&NR=20040057893A |
| ParticipantIDs | epo_espacenet_KR20040057893A |
| PublicationCentury | 2000 |
| PublicationDate | 20040702 |
| PublicationDateYYYYMMDD | 2004-07-02 |
| PublicationDate_xml | – month: 07 year: 2004 text: 20040702 day: 02 |
| PublicationDecade | 2000 |
| PublicationYear | 2004 |
| RelatedCompanies | RENESAS TECHNOLOGY CORP |
| RelatedCompanies_xml | – name: RENESAS TECHNOLOGY CORP |
| Score | 2.5652447 |
| Snippet | PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a resistance of an interconnection by preventing a reaction result... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE PROVIDED WITH INTERCONNECTION STRUCTURE WITH STABLE ELECTRICAL RESISTANCE AND MANUFACTURING METHOD THEREOF |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040702&DB=EPODOC&locale=&CC=KR&NR=20040057893A |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEG8QjfqmqPEDTRPN3hbnGBs8EDPWzk1YS0qHvpF9sMRogMiMj_7r3gYoT7w1_V0v6TXX67V3V4TumlkGSKaruh5nqhFZuholzVRtJUCeamaSGUVycsBMLzSeX5uvFfSxzoUp64R-l8URQaMS0Pe83K_n_5dYpIytXNzHb9A1e3Rlhyhr7xjcE01XSLdDB5xwR3GcTk8oTCwxOJuAebZ30C4cpK1CH-ioW-SlzDeNinuE9gbAb5ofo8r7rIYOnPXfazW0H6yevKG50r7FCfoZFkLjjISO5AITOvIdigeCj3xCCX7xpYfLErdAw2gZHYKHUgB1KOgSHkq726eY9gEufnvsY1gBH3oZcLIZwYHNQtcuRvjsCQdUepxg6VFBuXuKbl0qHU-FmYz_BDfuic1pN85QdTqbTs4RBsPYssA5jR_iidGOrXaqNbJEM1tWFKdRZl6g-jZOl9vhK3S4jG-xVE2vo2r--TW5BtOdxzelxH8B-DqVRA |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8gGvFNUeMHahPN3hbnGAweiBlr5yZbR0ZB3sg-WGI0YGTGR_91bwOUJ96a_q6X9Jrr9dq7K8BdI00RSVVZVaNU1kJdlcO4kcitGMkTpRmnWp6c7PGmPdSex41xCd7XuTBFndDvojgialSM-p4V-_XH_yUWLWIrF_fRK3bNHy3RodLaO0b3RFEl2u2wvk99UzLNTi-QeLDE8GyC5tnYgV08ZOu5PrBRN89L-dg0KtYh7PWR3yw7gtLbvAoVc_33WhX2vdWTNzZX2rc4hp9BLjSf06Ep_IBQNnJMRvqBP3Ioo-TFETYpStwiDWdFdAgZiACphwFbwgNhdF1GmItw_tujS3AFHOzlyMnglHgGH1pGPsLhT8RjwvYpETYLmG-dwK3FhGnLOJPJn-AmvWBz2vVTKM_ms-kZEDSMLR2d0-ghmmrtSG8nSj2NFRRKGCVh2jyH2jZOF9vhG6jYwnMnrsN7l3CwjHXRZUWtQTn7_JpeoRnPoutC-r8mfpg3 |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+DEVICE+PROVIDED+WITH+INTERCONNECTION+STRUCTURE+WITH+STABLE+ELECTRICAL+RESISTANCE+AND+MANUFACTURING+METHOD+THEREOF&rft.inventor=SAKAI+KATSUHISA&rft.date=2004-07-02&rft.externalDBID=A&rft.externalDocID=KR20040057893A |