SEMICONDUCTOR DEVICE PROVIDED WITH INTERCONNECTION STRUCTURE WITH STABLE ELECTRICAL RESISTANCE AND MANUFACTURING METHOD THEREOF

• Main Author: SAKAI KATSUHISA
• Format: Patent
• Language: English; Korean
• Published: 02.07.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce a resistance of an interconnection by preventing a reaction result from remaining on a surface of a conductive film using an oxide film formed on the surface of the conductive film. CONSTITUTION: A semiconductor device includes an interlayer dielectric(4) covering a first conductive film(3), a contact hole(5), an oxide film(9), and a second conductive film(6). The contact hole is provided in the interlayer dielectric and reaches the first conductive film. The oxide film is provided at a surface of the first conductive film located in the contact hole. The second conductive film is provided in the contact hole to surround the oxide film.