Semiconductor device fabricating method for improving a silicon contact resistance

• Main Authors: JIN, BEOM JUN, JUNG, EUN AE, LEE, MYEONG BEOM
• Format: Patent
• Language: English; Korean
• Published: 26.06.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for forming a semiconductor device capable of improving silicon contact resistance is provided to accelerate re-growth of epi in a subsequent heat treatment process by performing a delta doping process on an underlying layer by a pre-flow process. CONSTITUTION: A diffusion layer(110) of the second conductivity type is formed on a semiconductor substrate(100) of the first conductivity type. An interlayer dielectric(120) is deposited on the entire surface of the semiconductor substrate having the diffusion layer. The interlayer dielectric is patterned to form a contact hole exposing the diffusion layer. Gas including an element of the second conductivity type is flowed to the semiconductor substrate having the contact hole. A contact plug(130) is formed in the contact hole. 실리콘 접촉저항을 개선할 수 있는 반도체 소자 형성방법에 관해 개시한다. 본 발명은 제2 불순물형 확산층을 갖는 반도체 기판 전면 상에 층간절연막을 형성하고 제2 불순물형 확산층을 노출하는 콘택홀을 형성한다. 이어서 콘택홀을 채우는 콘택 플러그를 형성하기 전에 제2 불순물형 원소를 포함하는 가스, 예컨대 AsH, PH와 같은 가스를 먼저 흘린다. 따라서 제2 불순물형 확산층에 얕은 접합의 도핑이 이루어져 후속 열처리시 자연산화막의 성장을 억제하고, 에피택셜(epitaxial) 재성장을 촉진시킨다.