NON-LITHOGRAPHIC METHOD FOR PRODUCING MASK BY SELECTIVE REACTION, ARTICLE PRODUCED THEREBY AND COMPOSITION THEREFOR

PURPOSE: Provided are a method of producing a mask by forming fine patterns on a substrate used in microelectronics industry accurately and inexpensively without utilizing lithography, an article produced thereby and a composition therefor. CONSTITUTION: The structured article having a self aligned...

Full description

Saved in:
Bibliographic Details
Main Authors SANKARAPANDIAN MUTHUMANICKAM, HEDRICK JEFFREY C, HUANG ELBERT, GATES STEPHEN M, NITTA SATYANARAYANA V, PURUSHOTHAMAN SAMPATH, COLBURN MATTHEW E
Format Patent
LanguageEnglish
Korean
Published 12.05.2004
Edition7
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:PURPOSE: Provided are a method of producing a mask by forming fine patterns on a substrate used in microelectronics industry accurately and inexpensively without utilizing lithography, an article produced thereby and a composition therefor. CONSTITUTION: The structured article having a self aligned pattern on an existing pattern of a substrate is formed by the method comprising applying a coating of the masking material on a top surface of the substrate; and attaching at least a portion of the masking material onto portions of the existing pattern preferentially to the top surface. The method is carried out using a composition for selectively coating such pattern on a substrate, which comprises a carrier material for applying onto a substrate and a polymer in the carrier that is reactively grafted into regions of the substrate having first chemical characteristics.
Bibliography:Application Number: KR20030074712