METHOD FOR FABRICATING ALUMINUM NITRIDE SUBSTRATE TO FABRICATE OPTIMIZED AlN SUBSTRATE FOR SUPPORT UNIT FOR ELECTRONIC PART OF LOW VOLTAGE APPLICATION PART

• Main Authors: JARRIGE JEAN, FERRATO MARC, PETITBON ALAIN
• Format: Patent
• Language: English; Korean
• Published: 01.04.2004
• Edition: 7
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

PURPOSE: A method for fabricating an aluminum nitride substrate is provided to fabricate an optimized AlN substrate for a support unit for an electronic part of a low voltage application part by spraying powder including AlN particles on the support unit at a high temperature and a high speed. CONSTITUTION: Powder is sprayed on the support unit at a high temperature and a high speed to form a substrate. The powder including the AlN particles are covered with an oxide precursor material layer that forms a liquid in the periphery of the AlN particles during a spray process and is selected from an oxide precursor material for forming an oxide.