METHOD FOR FABRICATING ALUMINUM NITRIDE SUBSTRATE TO FABRICATE OPTIMIZED AlN SUBSTRATE FOR SUPPORT UNIT FOR ELECTRONIC PART OF LOW VOLTAGE APPLICATION PART
PURPOSE: A method for fabricating an aluminum nitride substrate is provided to fabricate an optimized AlN substrate for a support unit for an electronic part of a low voltage application part by spraying powder including AlN particles on the support unit at a high temperature and a high speed. CONST...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
01.04.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A method for fabricating an aluminum nitride substrate is provided to fabricate an optimized AlN substrate for a support unit for an electronic part of a low voltage application part by spraying powder including AlN particles on the support unit at a high temperature and a high speed. CONSTITUTION: Powder is sprayed on the support unit at a high temperature and a high speed to form a substrate. The powder including the AlN particles are covered with an oxide precursor material layer that forms a liquid in the periphery of the AlN particles during a spray process and is selected from an oxide precursor material for forming an oxide. |
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Bibliography: | Application Number: KR20030066187 |