Method of etching aluminum layer using hard mask and metalization method for semiconductor device

• Main Authors: SON, SEUNG YONG, KANG, CHANG JIN, LEE, CHEOL GYU, NAM, BYEONG YUN
• Format: Patent
• Language: English; Korean
• Published: 26.02.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PURPOSE: A method for etching an aluminum layer using a hard mask and a method for forming a metal line of a semiconductor device are provided to be capable of minimizing a bad influence due to particles in carrying out an etching process for forming a metal line pattern and restraining the generation of cone type defects. CONSTITUTION: An aluminum layer(20a) is formed at the upper portion of a semiconductor substrate(10). A hard mask pattern(30a) is formed at the upper portion of the resultant structure for partially exposing the aluminum layer. An etching process is carried out at the aluminum layer by using etching gas mixed with Cl2 and N2. At this time, the Cl2 and N2 have a flow rate of 1:1 -1:10. Preferably, the hard mask pattern is made of oxide, nitride, or oxide nitride. N가스를 주성분으로 하는 식각 가스를 사용하여 알루미늄 배선층을 식각하는 방법 및 이를 이용한 반도체 소자의 배선 형성 방법에 관하여 개시한다. 본 발명에 따른 방법에서는 반도체 기판상에 알루미늄막을 형성한다. 상기 알루미늄막상에 상기 알루미늄막의 일부를 노출시키는 하드 마스크 패턴을 형성한다. Cl가스 및 N가스가 1:1 ∼ 1:10의 유량비로 혼합된 식각 가스를 사용하여 상기 노출된 알루미늄막을 식각한다.