METHOD FOR EXPOSING PHOTO RESIST FILM AND EXPOSURE EQUIPMENT USING THE SAME

PURPOSE: A method for exposing a photoresist layer is provided to finely adjust a wafer with respect to a reticle when misalignment of the reticle and the wafer occurs by detecting the misalignment occurring in a process for transferring the reticle. CONSTITUTION: The first mark formed in the reticl...

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Bibliographic Details
Main Author MUN, DAE SEONG
Format Patent
LanguageEnglish
Korean
Published 21.02.2004
Edition7
Subjects
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Summary:PURPOSE: A method for exposing a photoresist layer is provided to finely adjust a wafer with respect to a reticle when misalignment of the reticle and the wafer occurs by detecting the misalignment occurring in a process for transferring the reticle. CONSTITUTION: The first mark formed in the reticle(210) is overlapped with the second mark formed in a transfer member for transferring the reticle. A picture process is performed to generate and store a reference image. The reticle is transferred to align the reticle with the wafer(710) having the photoresist layer. Light is irradiated to the reticle to perform an exposure process on the photoresist layer. The reticle is transferred. The first and second marks are pictured to generate a comparison image to determine whether the position of the first mark is changed with respect to the second mark. The reference image is compared with the comparison image. How much the position of the reticle is changed is calculated when the reference image doesn't conform to the comparison image. The position of the wafer is controlled according to the quantity of the changed position to re-align the reticle with the wafer. 본 발명은 웨이퍼에 형성된 감광막에 노광을 수행하기 위하여 레티클을 고속으로 이동하는 과정에서 레티클이 웨이퍼의 지정된 위치와 미스 얼라인 될 경우, 이를 디텍팅하여 웨이퍼 및 레티클의 얼라인을 다시 수행한 후 노광을 수행하도록 하여 노광 불량을 최소화한 감광막 노광 방법 및 이를 이용한 노광 설비에 관한 것으로, 본 발명에 의하면, 웨이퍼에 형성된 감광막에 노광 패턴을 전사하는 레티클이 고속으로 이송되는 과정 또는 이송 후 레티클 및 레티클을 고정하는 레티클 스테이지의 미스 얼라인먼트에 의한 노광 불량을 방지하는 효과를 갖는다.
Bibliography:Application Number: KR20020048264