LASER THERMAL TRANSFER DONOR ELEMENT INCLUDING SEPARATE DOPANT LAYER

• Main Authors: TUTT LEE WILLIAM, CULVER MYRON WILLIAM, TANG CHING WAN
• Format: Patent
• Language: English; Korean
• Published: 11.02.2004
• Edition: 7
• Subjects: ADHESIVES; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COLOUR PRINTING; CORRECTION OF TYPOGRAPHICAL ERRORS; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LINING MACHINES; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; PRINTED CIRCUITS; PRINTING; PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; SELECTIVE PRINTING MECHANISMS; STAMPS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TYPEWRITERS

PURPOSE: Provided is a donor element adapted for use in making an OLED(Organic Light-Emitting Diode) device. CONSTITUTION: A donor element(10) comprises a donor support element(14), a light-absorbing layer(16) disposed on the donor support element, which produces heat in response to light, a host material layer(18) disposed on the light-absorbing layer, and a dopant layer so disposed on the host material layer. When the donor element is disposed in a transfer relationship with the organic light-emitting diode device and when light is absorbed by the light-absorbing layer(16), heat is produced from the light-absorbing layer to cause vaporization transfer of a host material and a dopant material, thereby causing at least partial mixing in the organic light emitting diode device.