Semiconductor memory device having stacked capacitor and trench capacitor and method for fabricating the same

PURPOSE: A semiconductor memory device including a stack-type capacitor and a trench-type capacitor is provided to increase the height of a whole capacitor even if a trench with a low aspect ratio is formed in a process for a trench for forming the trench-type capacitor. CONSTITUTION: A silicon-on-i...

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Bibliographic Details
Main Authors JIN, BEOM JUN, LEE, MYEONG BEOM, KIM, YEONG PIL
Format Patent
LanguageEnglish
Korean
Published 31.01.2004
Edition7
Subjects
ELECTRICITY
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Summary:PURPOSE: A semiconductor memory device including a stack-type capacitor and a trench-type capacitor is provided to increase the height of a whole capacitor even if a trench with a low aspect ratio is formed in a process for a trench for forming the trench-type capacitor. CONSTITUTION: A silicon-on-insulator(SOI) substrate(100) is prepared. The trench-type capacitor is formed in the trench of the SOI substrate, including the first dielectric layer(152) and the first storage node(154). The stack-type capacitor(200) is formed on the SOI substrate, including the second storage node(202), the second dielectric layer(204) and an upper plate electrode(206). 본 발명의 반도체 메모리 소자는, 스택형 커패시터 및 트랜치형 커패시터를 포함하는 반도체 메모리 소자로서, SOI 기판과, 이 SOI 기판의 트랜치 내에 형성되며, 제1 유전체막 및 제1 스토리지 전극을 포함하는 트랜치형 커패시터, 및 SOI 기판 위에 형성되며, 제2 스토리지 전극, 제2 유전체막 및 상부 플레이트 전극을 포함하는 스택형 커패시터를 포함한다.
Bibliography:Application Number: KR20020043313