OBSERVATION METHOD OF SEMICONDUCTOR DEVICE THROUGH ELECTRONIC MICROSCOPE, AND DEVICE FOR THE SAME

PURPOSE: An observation method of a semiconductor structure and an electronic microscope system are provided to be capable of observing a structure having large aspect ratio with higher freedom. CONSTITUTION: An electron microscope optical component(27) creates an image of secondary electron emitted...

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Bibliographic Details
Main Authors KIENZLE OLIVER, MULLER INGO, KNIPPELMEYER RAINER
Format Patent
LanguageEnglish
Korean
Published 16.01.2004
Edition7
Subjects
APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GAMMA RAY OR X-RAY MICROSCOPES
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
IRRADIATION DEVICES
MEASURING
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
SCANNING-PROBE TECHNIQUES OR APPARATUS
SEMICONDUCTOR DEVICES
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
TESTING
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Summary:PURPOSE: An observation method of a semiconductor structure and an electronic microscope system are provided to be capable of observing a structure having large aspect ratio with higher freedom. CONSTITUTION: An electron microscope optical component(27) creates an image of secondary electron emitted from a semiconductor device(3) located in a visual field(37) of an object to be magnified, on a detection device(35) having a position detecting function. Irradiation devices(55,59) emit primary energy beams(51,53). The semiconductor device has an upper surface with large aspect ratio furnished by a first material, and a recess part having a bottom furnished by a second material.
Bibliography:Application Number: KR20030045653