THIN FILM TRANSISTOR APPARATUS AND MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR SUBSTRATE PROVIDED WITH THE SAME, AND DISPLAY APPARATUS

• Main Authors: KUROSAWA YOSHIO, HOTTA KAZUSHIGE
• Format: Patent
• Language: English; Korean
• Published: 13.01.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: To provide a manufacturing method of a thin film transistor apparatus capable of properly forming an LDD region even when a thin gate insulation film is employed and properly activating impurities. CONSTITUTION: After a gate electrode is formed, n-type impurities with high concentration are injected by using a resist mask for etching a gate insulation film, and after SiO2 as a first interlayer insulation film is formed, laser activation is performed. Addition of a photolithography processes can be avoided by injecting the impurities by using the resist mask for etching and a problem of the injection of excessive n-type impurities to the LDD region can be avoided even when the thin gate insulation film is employed. Further, by changing the thickness of the SiO2 film being the first interlayer insulation film depending on the thickness of the gate insulation film, a reflectance(120b) of the high concentration impurity injection region being a source and drain region and a reflectance(121b) of the LDD region can be mede nearly equal with respect to a laser beam. Both the regions can sufficiently be activated at the same time.