PHOTO-RESIST COMPOSITION
PURPOSE: Provided is a photoresist composition, which can improve the interfacial contact with a substrate and has excellent sensitivity, resolution, chemical resistance and heat resistance. CONSTITUTION: The photoresist composition comprises a resist solution consisting of novolac resin which is an...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
10.10.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: Provided is a photoresist composition, which can improve the interfacial contact with a substrate and has excellent sensitivity, resolution, chemical resistance and heat resistance. CONSTITUTION: The photoresist composition comprises a resist solution consisting of novolac resin which is an alkali soluble resin, a photosensitizer and a solvent, and further comprises 0.001 wt% to 8.0 wt% of a benzoic acid-based compound of the formula 1 based on 100 wt% of the resist solution. In the formula 1, R is hydrogen atom or a C1-C8 alkyl group. In particular, the photosensitizer is an ortho-naphthoquinone diazide compound.
본 발명은 포토레지스트와 기판과의 계면 밀착성을 개량하고, 에칭공정 처리에 있어서의 문제점을 개선함과 동시에, 감도, 해상성, 내열성에 우수한 포토레지스트 조성물을 제공하는 것으로, g-line, i-line 포토레지스트, 액정표시소자용 레지스트 등의 조성물에 하기 화학식 1의 벤조산계 화합물을 첨가시킴으로써 레지스트와 기판사이의 밀착성을 개선시키고, 또한 고감도화, 내열성, 내화학성 등을 향상시킨다. (식중, R 은 수소 원자, 또는 C~ C인 알킬기를 나타냄) |
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Bibliography: | Application Number: KR20020018615 |