Method and apparatus for forming semiconductor wire method and apparatus for fabricating semiconductor device and wafer

• Main Authors: OTAKE KIYOSHI, DOI TOSHIYA, NOSE KOUICHI, MARUNAKA MASAO, TAKIGAWA SHIROU
• Format: Patent
• Language: English; Korean
• Published: 25.06.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: To provide a method and apparatus for semiconductor wiring formation, a method and apparatus for semiconductor device manufacturing, and a wafer which can omit a thermosetting process and a surface smoothing process, reduce the thickness of a barrier layer, and form wires in a groove with a high aspect ratio under optimum conditions. CONSTITUTION: A vacuum chamber 2 whose inside can be held in a substantially vacuum state is used and the wafer 201 where a semiconductor wiring film is formed is held by a base material holder 3 arranged in the vacuum chamber 2; and the material of the semiconductor wiring film is vaporized by a vapor source 4 arranged in the vacuum chamber 2 and a high-frequency power source 10 supplies high-frequency electric power for generating a plasma 301 in the vacuum chamber 2 by using the base material holder 3 as one electrode. 내부를 실질적인 진공 상태로 유지하는 것이 가능한 진공 쳄버를 사용하고, 진공 쳄버내에 설치된 기재 홀더에 의해 반도체 배선막이 형성되는 웨이퍼를 보호지지하고, 진공 쳄버내에 배치된 증발원에 의해 반도체 배선막 재료를 증발시켜, 고주파 전원에 의해 기재 홀더를 일측의 전극으로 하여 진공 쳄버내에 플라즈마를 발생시키기 위한 고주파 전력을 공급하는 것이다.