Post exposure bake apparatus and post exposure bake method using the same

PURPOSE: A post exposure bake apparatus and a post exposure bake method using the same are provided to be capable of preventing the abrupt temperature change of a semiconductor wafer coated with an exposed photoresist layer in a chamber by conserving vacuum state under a bake process using a vacuum...

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Bibliographic Details
Main Authors KWON, YOUNG JONG, YANG, MYUNG HUN
Format Patent
LanguageEnglish
Korean
Published 25.06.2003
Edition7
Subjects
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Summary:PURPOSE: A post exposure bake apparatus and a post exposure bake method using the same are provided to be capable of preventing the abrupt temperature change of a semiconductor wafer coated with an exposed photoresist layer in a chamber by conserving vacuum state under a bake process using a vacuum pump. CONSTITUTION: A hot plate(105) is installed in the lower portion of a chamber(101) for loading a wafer coated with an exposed photoresist layer. A wafer guide is installed at both edge portion of the hot plate for guiding and separating the wafer from the bottom portion of the hot plate. A shutter(109) is located at one side of the chamber for switching the chamber. A vacuum pump(119) is connected through a vacuum line(115) to the chamber for conserving the vacuum state of the chamber. A plurality of support pins(113) are located in through holes of the hot plate for moving the wafer up and down. A gas injecting line(116) is connected with the upper portion of the chamber for supplying inert gas. 후노광 베이크 장치 및 이를 이용한 후노광 베이크 방법을 제공한다. 본 발명은 챔버의 하부에 노광된 포토레지트막이 도포된 반도체 웨이퍼가 로딩되는 핫 플레이트가 설치되어 있고, 상기 반도체 웨이퍼는 상기 핫 플레이트의 바닥에서 이격되도록 하는 반도체 웨이퍼 가이드가 설치되어 있다. 상기 노광된 포토레지스트막이 도포된 반도체 웨이퍼는 상기 챔버를 진공 상태로 유지된 상태에서 복사 및 전도 방식의 열전달을 통하여 후노광 베이크를 수행한다. 이에 따라, 본 발명은 반도체 웨이퍼의 온도 균일성을 향상시켜 임계 크기 균일도를 향상시킬 수 있다.
Bibliography:Application Number: KR20010078958