MAGNETIC RANDOM ACCESS MEMORY AND READING METHOD THEREOF

PURPOSE: To provide a read-out principle and a read-out circuit with respect to an MRAM. CONSTITUTION: In read-out of the first time, a read-out current is made to flow through a plurality of TMR elements connected in parallel in one column or one block, and initial data is detected. After that, wri...

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Bibliographic Details
Main Author IWATA YOSHIHISA
Format Patent
LanguageEnglish
Korean
Published 22.05.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PURPOSE: To provide a read-out principle and a read-out circuit with respect to an MRAM. CONSTITUTION: In read-out of the first time, a read-out current is made to flow through a plurality of TMR elements connected in parallel in one column or one block, and initial data is detected. After that, write-in of trial data is performed for a selected memory cell. At the same time of write-in of trial data, read-out of the second time is performed. In read-out of the second time, a read-out current is made to flow in a plurality of TMR elements connected in parallel in one column or one block, and comparison data is read out. Successively, the initial data is compared with the comparison data, and a data value of the selected memory cell is judged. Lastly, rewriting is performed for the selected memory cell. 1회째 판독에서는, 1 컬럼 내 또는 1 블록 내의 병렬 접속된 복수의 TMR 소자에 판독 전류를 흘려, 이니셜 데이터를 검출한다. 이 후, 선택된 메모리 셀에 대하여, 시행(試行) 데이터의 기입이 실행된다. 시행 데이터의 기입과 동시 또는 이것에 병행하여, 2회째 판독이 행해진다. 2회째 판독에서는 1 컬럼 내 또는 1 블록 내의 병렬 접속된 복수의 TMR 소자에 판독 전류를 흘리고, 비교 데이터를 판독한다. 계속하여, 이니셜 데이터와 비교 데이터를 비교하여, 선택된 메모리 셀의 데이터값을 판단한다. 마지막으로, 선택된 메모리 셀에 대하여, 재기입을 행한다.
Bibliography:Application Number: KR20020070316