Process of forming thin film and precursor for chemical vapor deposition

• Main Authors: SAKURAI ATSUSHI, YAMADA NAOKI, YOSHINAKA ATSUYA, ONOZAWA KAZUHISA
• Format: Patent
• Language: English; Korean
• Published: 22.05.2003
• Edition: 7
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: To provide a method of producing a thin film of strontium titanate, barium titanate or barium strontium titanate by a chemical vapor deposition method, giving stable production conditions suitable for industrialization, and to provide a raw material for chemical vapor deposition. CONSTITUTION: In the method of producing the thin film of strontium titanate, barium titanate or barium-strontium titanate by a chemical vapor deposition method, a titanium compound expressed by formula (1) is used: (wherein, R1 is a hydrogen atom or a methyl group; and R2 and R3 are individually a methyl group, an ethyl group, or a group forming a methylene group, a methylmethylene group or a dimethylmethylene group so as to be connected). 본 발명은 하기 화학식 1로 표시되는 티타늄 화합물을 사용하는 것을 특징으로 하는 화학 기상 성장법에 의한 티탄산 스트론튬, 티탄산 바륨 또는 티탄산 바륨스트론튬 박막의 제조방법을 제공한다. [화학식 1] (식 중, R1은 수소원자 또는 메틸기를 나타내고, R2, R3은 각각 메틸기, 에틸기 또는 연결하여 메틸렌기, 메틸메틸렌기, 디메틸메틸렌기를 형성하는 기를 나타낸다.)