Semiconductor film semiconductor device and method of manufacturing the same

• Main Authors: MATSUO TAKUYA, NOMURA KATSUMI, SHIGA AIKO, MIYAIRI HIDEKAZU, MAKITA NAOKI
• Format: Patent
• Language: English; Korean
• Published: 18.04.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PURPOSE: To provide a semiconductor film manufacturing method of improving a semiconductor film having a crystal structure in film properties by improving a technique indicated in the publication number No.8-78329, a TFT which uses the above semiconductor film as an active layer and is superior in TFT characteristics such as electric field effect mobility, and its manufacturing method. CONSTITUTION: An metal element which accelerates crystallization of silicon is added to a semiconductor film having an oxygen content of below 5x10¬18/cm¬3 and an amorphous structure, and the amorphous semiconductor film is thermally treated into a crystalline semiconductor film. Then, an oxide film is removed from the surface of the crystalline semiconductor film, oxygen is introduced into the crystalline semiconductor film until the oxygen content of the film reaches to 5x10¬18/cm¬3 to 1x10¬21/cm¬3, an oxide film is removed from the surface of the semiconductor film, and then the surface of the semiconductor is irradiated with a laser beam is an inert gas atmosphere or in a vacuum so as to be flattened. JP 8-78329 A에 개시된 기술에 신규한 개선을 추가함으로써, 결정 구조를 가지는 반도체 막의 막 특성이 개선된 제조 방법이 제공된다. 추가로, 액티브 층으로서 반도체 막을 사용하는, 전계 효과 이동도 같은 우월한 TFT 특성들을 가지는 TFT와, 이 TFT를 제조하는 방법이 제공된다. 실리콘의 결정화를 촉진하는 금속성 원소가 비정질 구조와 5x10/cm의 막내 산소 농도를 가지는 반도체 막에 추가된다. 비정질 구조를 가지는 반도체 막은 그후 열처리되어 결정 구조를 가지는 반도체 막을 형성한다. 이어서, 표면상의 산화막이 제거된다. 산소가 결정 구조를 가지는 반도체 막에 도입되고, 막내의 산소 농도가 5x10/cm내지 1x10/cm이 되도록 처리가 수행된다. 반도체 막의 표면상의 산화막을 제거한 이후에, 반도체 막 표면이 불활성 가스 분위기 또는 진공하에서 레이저 광을 조사함으로써 평준화된다.