Optical Number Decision Method for Reflection Protecting Film and Method for Forming Resist Pattern

• Main Authors: KAWAMURA DAISUKE, SHIOBARA EISHI
• Format: Patent
• Language: English; Korean
• Published: 17.03.2003
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PURPOSE: To provide a method of determining the optical coefficient of a lower- layer antireflection film, and to provide a method of forming a resist pattern optimum for controlling variations in film thickens, even when the resist film is lower in transparency, with respect to short wavelength of 157 nm. CONSTITUTION: When an adequate exposure quantity due to variations in resist film thickness is expressed by the sum of a monotonously increasing term and a decaying oscillating term, the optical constants of the lower-layer antireflection film is selected in such a way that a local minimum value nearest to a local maximum point, on the increasing side of the film thickness than the local maximum point in the varying curve, is made almost equal to the local maximum point or no extremum point exists. 본 발명의 과제는 157 ㎚의 단파장에 대해 투명성이 낮은 레지스트막이라도, 그 막 두께 변동의 억제에 적합한 하층 반사 방지막의 광학 정수의 결정 방법 및 레지스트 패턴 형성 방법을 제공하는 데 있다. 레지스트막 두께 변동에 의한 적정 노광량을 단조 증가항과 감쇠 진동항의 합에 의해 나타낸 경우에, 그 변화 곡선에 있어서 극대점보다도 막 두께가 증가하는 측에서 상기 극대점의 인접 부근에 존재하는 극소치와 상기 극대치가 거의 같도록, 또는 극점이 존재하지 않도록, 상기 하층 반사 방지막의 광학 정수를 선택한다.