SUBSTRATE PROCESSING APPARATUS

• Main Authors: MORITA SHINYA, MOROHASHI AKIRA, SAKAI MASANORI, OKUDA KAZUYUKI, KAGAYA TORU
• Format: Patent
• Language: English; Korean
• Published: 14.02.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: To use gas supplied into a reaction tube efficiently by improving the shape of a gas nozzle. CONSTITUTION: A tubular reaction tube 12 is installed vertically and the opening on a end flange 13 is sealed hermetically with a seal cap 14 and then a boat 15 mounting substrates, i.e., wafers W, in multistage is inserted into the reaction tube 12. Subsequently, gas is supplied from a nozzle 21 to the plurality of wafers W in the reaction tube 12 thus depositing a thin film on the wafers W. The nozzle 21 is provided to creep along the inner wall 22 of the reaction tube 12 in the axial direction thereof. The nozzle 21 has an inner space 23 spreading over an angle of 45°-180° in the inner circumferential direction of the tube. The nozzle 21 is provided with a plurality of gas ejection openings 24 in correspondence with respective wafers W and supplies gas above respective wafers W. 본 발명은 가스 노즐의 형상을 개선하여 반응관내에 공급한 가스를 효율적으로 사용할 수 있도록 한 기판 처리 장치에 관한 것으로, 상기 기판 처리 장치는 원통형 반응관(12)을 수직설치하고, 로구 플랜지(13)의 통로를 씰 캡(14)로 밀봉하며, 반응관(12)내에 기판인 웨이퍼(W)를 다단으로 재치하는 보트(15)를 삽입한다. 원통형 반응관(12)내의 복수의 웨이퍼(W)에 노즐(21)로부터 가스를 공급하여 웨이퍼(W)에 박막을 퇴적시킨다. 노즐(21)은 원통 반응관(12)의 관축방향으로 관내벽(22)을 따라 연장되도록 설치된다. 또한, 노즐(21)은 관내주방향으로 45°이상 180°이하로 확대된 노즐 공간(23)을 내부에 갖는다. 노즐(21)의 가스 분출구(24)는 각 웨이퍼(W)에 대응하도록 복수개 설치되며, 각 웨이퍼(W)상에 가스를 흘린다.