SEMICONDUCTOR TREATING APPARATUS AND CLEANING METHOD OF THE SAME

• Main Authors: SAKUMA HARUNOBU, NAKAHARA MIWAKO, OHOKA TSUKASA, ITAYA HIDEHARU, ARAI TOSHIYUKI, SANO ATSUSHI, YAMAMOTO SATOSHI
• Format: Patent
• Language: English; Korean
• Published: 11.02.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: To effectively remove a ruthenium film, an osmium film, and oxides thereof deposited or adhered inside a semiconductor treatment device. CONSTITUTION: Reaction products deposited or adhered inside the device are rapidly and effectively removed by individually using an oxygen atom donating gas and a halogen gas and feeding the gases inside the device. The device can be stably operated, a thin film of high quality can be formed, and a semiconductor element can be produced in high yield. 본 발명의 과제는 반도체 처리 장치의 내부에 퇴적 또는 부착한 루테늄막, 오스뮴막 및 그들의 산화물을 효과적으로 제거하는 것이다. 상기한 목적을 달성하기 위해, 산소 원자 공여성 가스와 할로겐 가스를 각각 개별적으로 구분 사용하여 장치 내부에 공급함으로써, 장치 내에 퇴적 혹은 부착한 반응 생성물을 고속이면서 또한 효과적으로 제거할 수 있다. 이에 의해, 장치의 안정 가동을 가능하게 할 뿐만 아니라, 고품질의 박막 형성, 또는 고수율의 반도체 소자의 생산을 실현한다.