CHEMICALLY AMPLIFIED NEGATIVE PHOTORESIST COMPOSITION FOR THE FORMATION OF THICK FILMS PHOTORESIST BASE MATERIAL AND METHOD OF FORMING BUMPS USING THE BASE

• Main Authors: OKUI TOSHIKI, SAITO KOJI, WASHIO YASUSHI, KOMANO HIROSHI
• Format: Patent
• Language: English; Korean
• Published: 11.02.2003
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

PURPOSE: A chemically amplified negative photoresist composition for a thick film, a photoresist substrate and a bump forming method using the composition are provided, to improve the sensitivity and the plating resistance. CONSTITUTION: The chemically amplified negative photoresist composition comprises an alkali-soluble resin; a compound generating an acid by the irradiation of a radiant ray; and a compound capable of being crosslinked in the presence of an acid, wherein the alkali-soluble resin is a mixture comprising 50-98 wt% of a novolac resin having a mass average molecular weight of 5,000-10,000 and 2-50 wt% of a polymer having at least hydroxystyrene unit and a mass average molecular weight of 5,000 or less. Preferably the alkali-soluble resin comprises m-cresol novolac resins obtained by condensation of m-cresol and aldehydes in the presence of an acid catalyst; and the compound generating an acid by the irradiation of a radiant ray is a compound having at least two oxime sulfonate groups represented by R-SO2O-N=C(CN)-, wherein R is an alkyl or aryl group. 고감도이며 도금내성이 양호하고 또한 CSP 제조기술에 사용되는 범프, 재배선, 메탈포스트형성용 재료로서 바람직한 후막형성에 적합한 후막용 화학증폭형 네거티브형 포토레지스트 조성물, 포토레지스트 기재 및 이것을 사용한 범프형성방법을 제공하는 것으로, (A) 알칼리 가용성수지, (B) 방사선 조사에 의해 산을 발생시키는 화합물 및 (C) 산의 존재하에서 가교화 반응하는 화합물을 함유하는 화학증폭형 네거티브형 포토레지스트 조성물에서, 상기 (A) 성분이 (가) 중량평균 분자량 5000 ∼ 10000 의 범위에 있는 노볼락수지 및 (나) 적어도 히드록시스티렌 구성단위를 갖고, 중량평균 분자량 5000 이하인 중합체의 혼합물로 이루어지는 것을 특징으로 하는 막두께 20 ∼ 150 ㎛ 의 후막용 화학증폭형 네거티브형 포토레지스트 조성물.