A SEMICONDUCTOR DEVICE

PURPOSE: To provide a semiconductor device such as a power MOSFET capable of reducing ON resistance by effectively lowering drift resistance components. CONSTITUTION: The semiconductor device is provided with a first conductivity type drain layer (12), a first conductivity type drift layer (8) on it...

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Bibliographic Details
Main Author ONO SYOTARO
Format Patent
LanguageEnglish
Korean
Published 09.01.2003
Edition7
Subjects
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