A SEMICONDUCTOR DEVICE
PURPOSE: To provide a semiconductor device such as a power MOSFET capable of reducing ON resistance by effectively lowering drift resistance components. CONSTITUTION: The semiconductor device is provided with a first conductivity type drain layer (12), a first conductivity type drift layer (8) on it...
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Main Author | |
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Format | Patent |
Language | English Korean |
Published |
09.01.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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