Photoresist Monomer Containing Fluorine-Substituted Benzylcarboxylate Group and Photoresist Polymer Comprising the same

• Main Authors: SHIN, GI SU, LEE, GEUN SU, JUNG, JAE CHANG
• Format: Patent
• Language: English; Korean
• Published: 31.12.2002
• Edition: 7
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC CHEMISTRY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

PURPOSE: A photoresist monomer containing a benzyl carboxylate group substituted with fluorine, a photoresist polymer containing the repeating unit containing the monomer, a preparation method of the polymer, a photoresist composition containing the polymer, a photoresist patterning method using the composition and a semiconductor device made using the method are provided, which composition is improved in the etching resistance, the heat resistance and the adhesive strength, can be developed in a tetramethylammonium hydroxide solution, and has a low absorptivity at a wavelength of 193 nm and 157 nm. CONSTITUTION: The photoresist monomer is represented by the formula 1, wherein R1 is a substituted or unsubstituted linear or branched alkylene group of C1-C10, or a substituted or unsubstituted linear or branched alkylene group of C1-C10 containing the ether group (-O-); X1 and X2 are CH2, CH2CH2 or O; l is 0 or 1; and m is an integer of 1-5. The polymer contains the repeating unit containing the monomer of the formula 1; and optionally the repeating unit containing the monomer represented by formula 2, wherein Y and Y2 are H or a halogen atom; and Z is O, N-R or N-O-R, and R is H, or alkyl group of C1-C10 or an alkyl group substituted with a halogen atom. The composition comprises 100 parts by weight of the photoresist polymer prepared from the monomer; 0.05-10 parts by weight of a photoacid generator; and 500-2,000 parts by weight of an organic solvent. 본 발명은 신규의 포토레지스트 단량체, 이로부터 중합된 포토레지스트 중합체 및 그 중합체를 이용한 포토레지스트 조성물에 관한 것으로, 보다 상세하게는 하기 화학식 1로 표시되는 에칭 내성이 강한 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는 단량체 및 이로부터 중합된 중합체와 이 중합체를 함유하는 조성물에 관한 것이다. 본 발명의 포토레지스트 조성물은 에칭 내성, 내열성 및 접착성이 우수하고, 현상액인 테트라메틸암모늄하이드록사이드(TMAH) 수용액에 현상 가능할 뿐만 아니라 193nm 및 157nm 파장에서 광 흡광도가 낮아 초미세 패턴을 형성 할 때, 원자외선 영역의 광원, 특히 VUV(157nm) 광원을 이용한 공정에 매우 유용하게 사용 될 수 있다. [화학식 1] 상기 화학식 1의 X, X, R, l 및 m은 명세서에 정의한 바와 같다.