ORGANIC/INORGANIC COMPLEX MATERIAL FOR GATE INSULATION LAYER OF TFT-LCD, GATE INSULATION LAYER CONTAINING THE MATERIAL, AND PREPARATION METHOD THEREOF

• Main Authors: HWANG, YUN IL, KIM, GWANG GYU, KIM, GYEONG JUN, KIM, HYO SEOK
• Format: Patent
• Language: English; Korean
• Published: 07.11.2002
• Edition: 7
• Subjects: CHEMISTRY; COMPOSITIONS BASED THEREON; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP

PURPOSE: An organic/inorganic complex material for the gate insulation layer of TFT-LCD, its preparation method, a gate insulation layer containing the material and an LCD containing the gate insulation layer are provided, to improve the coating property, the heat resistance, the hardness and the transmittance of the gate insulation layer. CONSTITUTION: The homopolymer for the organic/inorganic complex material is represented by the formula 1. Also the copolymer for the organic/inorganic complex material is a copolymer of the compound represented by the formula 1 and the compound represented by the formula 2 or 3. In the formula 1, R is an unsubstituted or substituted alkylene group of c1-C8; R1 is H or CH3; R2 is methyl, ethyl, propyl, butyl or methylene group; M is a metal selected from the group consisting of Si, Ti, Al, Zr and Ba; n is an integer of 100-1,000; and m is an integer of 5-10. In the formulas 2 and 3, R3 is H or CH3; R4 is benzyl group, an alkyl group of C1-C8, an aryl group having a substituent of C1-C6 or a benzyl group substituted with a halogen atom; and k is an integer of 100-1,000. The organic/inorganic complex material is comprises the polymer resin matrix comprising the homopolymer or the copolymer; and a metal compound selected from the group consisting of metal oxide, metal alkoxide sol, metal oxide and metal oxide sol.