AGGREGATE DIELECTRIC LAYER TO REDUCE NITRIDE CONSUMPTION

PURPOSE: An aggregate dielectric layer to reduce nitride consumption is provided to control the nitrogen consumption of nitrogen-containing layers or films in conjunction with a thermal processing in the presence of phosphorous. CONSTITUTION: Over a circuit substrate, formed is an aggregate comprisi...

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Bibliographic Details
Main Authors CHANDRAN SHANKAR, MUKAI KEVIN M
Format Patent
LanguageEnglish
Korean
Published 24.08.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: An aggregate dielectric layer to reduce nitride consumption is provided to control the nitrogen consumption of nitrogen-containing layers or films in conjunction with a thermal processing in the presence of phosphorous. CONSTITUTION: Over a circuit substrate, formed is an aggregate comprising a barrier layer(180) between the first dielectric layer comprising nitrogen(170) and the second dielectric layer comprising phosphorus(190). After forming the aggregate, the circuit substrate is thermally treated. 본 발명은 질소를 함유하는 제 1유전체층과 인을 함유하는 제 2유전체층 사이에 배리어 층을 포함하는 집합체를 기판상에 형성하는 단계 및 상기 집합체를 형성한 후에 상기 기판을 열처리하는 단계를 포함하는 방법이다. 본 발명은 기판 및 질소를 함유하는 제 1유전체층과 인을 함유하는 제 2유전체층 사이에 배리어층을 포함하는 상기 기판상에 형성된 집합체를 포함하는 장치이다.
Bibliography:Application Number: KR20020008703