A substrate treatment method

• Main Authors: MIZUTANI KAORU, OBUCHI KAZUTO, MATSUSHITA ATSUSHI
• Format: Patent
• Language: English; Korean
• Published: 14.08.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMISTRY; CONVEYING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GLASS; HANDLING THIN OR FILAMENTARY MATERIAL; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; PACKING; PERFORMING OPERATIONS; PNEUMATIC TUBE CONVEYORS; SEMICONDUCTOR DEVICES; SHOP CONVEYOR SYSTEMS; STORING; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING ORTIPPING; TRANSPORTING

PURPOSE: To prevent plasma generation in a waiting chamber of a treatment apparatus including a load lock chamber. CONSTITUTION: A pressure in the waiting chamber 2 and a treatment chamber 3 are lowered to several Pas(Pascals), an untreated substrate is put in the treatment chamber 3 by raising a mounting table 22, and the bottom opening of the treatment chamber 3 is hermetically closed by the mounting table 22. Whereafter a nitrogen gas is introduced into the waiting chamber 2 through a pipe 21 to increase a pressure in the waiting chamber to 200 to 3000 Pas, and in parallel with this, gas for ashing is introduced into the treatment chamber 3. A pressure in the treatment chamber 3 resultingly becomes in the range of 100 Pas. A high frequency is applied to an electrode of the treatment chamber 3 in this state to generate plasma in the treatment chamber 3, conducting, ashing treatment to the substrate W. 로드 로크실을 구비한 처리장치의 대기실 내에서의 플라즈마의 발생을 방지한다. 대기실(2) 및 처리 체임버(3) 내를 수 Pa(파스칼)로까지 감압하고, 지지 테이블(22)을 상승시켜서 처리 체임버(3) 내에 미처리 기판을 위치시킴과 동시에, 처리 체임버(3)의 하단 개구를 지지 테이블(8)로 기밀(機密) 상태로 닫는다. 그후, 배관(21)을 사용하여 대기실(2) 내에 질소가스를 도입하여 대기실(2) 내를 200∼3000Pa로까지 압력을 높이고, 이것과 병행하여 처리 체임버(3) 내에 애싱(ashing)용 가스를 도입한다. 그 결과, 처리 체임버(3) 내의 압력은 100Pa 정도로 된다. 이 상태에서 처리 체임버(3)의 전극에 고주파를 인가하여, 처리 체임버(3) 내에 플라즈마를 발생시켜서 기판(W)을 애싱처리한다.