METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PURPOSE: To provide a method for manufacturing a multi-layer wiring structure in which a stopper film consisting of a silicon nitride is used, on the stopper of which a fine photoresist pattern is exactly formed. CONSTITUTION: The silicon-nitride-film forming process consists of a process for select...

Full description

Saved in:
Bibliographic Details
Main Author NAKATA YOJI
Format Patent
LanguageEnglish
Korean
Published 26.07.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: To provide a method for manufacturing a multi-layer wiring structure in which a stopper film consisting of a silicon nitride is used, on the stopper of which a fine photoresist pattern is exactly formed. CONSTITUTION: The silicon-nitride-film forming process consists of a process for selecting a thickness of the silicon-nitride-film so that the reflected light of exima laser incident to a photoresist layer from the back of the photoresist layer on the silicon nitride is reduced. 본 발명은 질화 실리콘막으로 이루어지는 스토퍼막을 이용한 다층 배선 구조의 제조 방법에 있어서, 미세한 레지스트 패턴을 스토퍼막 상에 정확히 형성하는 것으로, 질화 실리콘막 형성 공정이 질화 실리콘막 상의 포토레지스트층의 이면으로부터 포토레지스트층으로 입사되는 엑시머 레이저의 반사광이 감소되도록 질화 실리콘막의 막 두께를 선택하는 공정으로 이루어진다.
Bibliography:Application Number: KR20010058514