METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrical properties and the reliability of capacitors by restraining the oxidation of a plug, a diffusion barrier and an ohmic contact layer. CONSTITUTION: A recessed plug(22) is formed in an insulating layer(21) hav...
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| Main Authors | , , |
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| Format | Patent |
| Language | English Korean |
| Published |
04.07.2002
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| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrical properties and the reliability of capacitors by restraining the oxidation of a plug, a diffusion barrier and an ohmic contact layer. CONSTITUTION: A recessed plug(22) is formed in an insulating layer(21) having a contact hole. An ohmic contact layer(23) and a diffusion barrier(24) are sequentially formed on the recessed plug. An IrOx is deposited on the resultant structure. An IrOxNy lower electrode(25b) is formed by a plasma treatment at N2 or NH3 atmosphere. A BLT dielectric film(26) is formed on the IrOxNy lower electrode. An upper electrode is then formed on the BLT dielectric film(26). |
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| AbstractList | PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrical properties and the reliability of capacitors by restraining the oxidation of a plug, a diffusion barrier and an ohmic contact layer. CONSTITUTION: A recessed plug(22) is formed in an insulating layer(21) having a contact hole. An ohmic contact layer(23) and a diffusion barrier(24) are sequentially formed on the recessed plug. An IrOx is deposited on the resultant structure. An IrOxNy lower electrode(25b) is formed by a plasma treatment at N2 or NH3 atmosphere. A BLT dielectric film(26) is formed on the IrOxNy lower electrode. An upper electrode is then formed on the BLT dielectric film(26). |
| Author | KIM, NAM GYEONG KWON, SUN YONG YUM, SEUNG JIN |
| Author_xml | – fullname: YUM, SEUNG JIN – fullname: KWON, SUN YONG – fullname: KIM, NAM GYEONG |
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| Notes | Application Number: KR20000082310 |
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| PublicationYear | 2002 |
| RelatedCompanies | HYNIX SEMICONDUCTOR INC |
| RelatedCompanies_xml | – name: HYNIX SEMICONDUCTOR INC |
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| Snippet | PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrical properties and the reliability of capacitors by restraining the... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
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