METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrical properties and the reliability of capacitors by restraining the oxidation of a plug, a diffusion barrier and an ohmic contact layer. CONSTITUTION: A recessed plug(22) is formed in an insulating layer(21) hav...

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Bibliographic Details
Main Authors YUM, SEUNG JIN, KWON, SUN YONG, KIM, NAM GYEONG
Format Patent
LanguageEnglish
Korean
Published 04.07.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrical properties and the reliability of capacitors by restraining the oxidation of a plug, a diffusion barrier and an ohmic contact layer. CONSTITUTION: A recessed plug(22) is formed in an insulating layer(21) having a contact hole. An ohmic contact layer(23) and a diffusion barrier(24) are sequentially formed on the recessed plug. An IrOx is deposited on the resultant structure. An IrOxNy lower electrode(25b) is formed by a plasma treatment at N2 or NH3 atmosphere. A BLT dielectric film(26) is formed on the IrOxNy lower electrode. An upper electrode is then formed on the BLT dielectric film(26).
Bibliography:Application Number: KR20000082310