METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrical properties and the reliability of capacitors by restraining the oxidation of a plug, a diffusion barrier and an ohmic contact layer. CONSTITUTION: A recessed plug(22) is formed in an insulating layer(21) hav...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
04.07.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A method for manufacturing a semiconductor device is provided to improve electrical properties and the reliability of capacitors by restraining the oxidation of a plug, a diffusion barrier and an ohmic contact layer. CONSTITUTION: A recessed plug(22) is formed in an insulating layer(21) having a contact hole. An ohmic contact layer(23) and a diffusion barrier(24) are sequentially formed on the recessed plug. An IrOx is deposited on the resultant structure. An IrOxNy lower electrode(25b) is formed by a plasma treatment at N2 or NH3 atmosphere. A BLT dielectric film(26) is formed on the IrOxNy lower electrode. An upper electrode is then formed on the BLT dielectric film(26). |
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Bibliography: | Application Number: KR20000082310 |