TRENCH ISOLATION METHOD USING SELECTIVE EPITAXIAL GROWTH PROCESS

• Main Author: HONG, SEOK HUN
• Format: Patent
• Language: English; Korean
• Published: 16.05.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A trench isolation method using a selective epitaxial growth(SEG) process is provided to improve capacity by protecting the surface of a semiconductor substrate from crystal damage such that the surface of the semiconductor substrate becomes a seed layer in forming an active layer. CONSTITUTION: An etch stop layer composed of a material having selectivity regarding a silicon oxide layer and the silicon oxide layer are sequentially stacked on the semiconductor substrate(10). The silicon oxide layer is eliminated from a portion for an active region through a photolithography process and an anisotropical etch process to form a trench. The silicon oxide layer is patterned to expose the etch stop layer. A wet etch process is performed regarding the etch stop layer to expose the semiconductor substrate from the portion for the active region by using the patterned silicon oxide layer as an etch mask. A selective epitaxial growth is performed regarding the silicon layer to form the active layer by using the exposed semiconductor substrate as the seed layer.