Antireflective porogens
PURPOSE: Provided are organo polysilica dielectric materials having low dielectric constants useful in electronic component manufacture along with methods of preparing the porous organo polysilica dielectric materials. Also, provided are methods of forming electronic devices containing such porous o...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
17.04.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: Provided are organo polysilica dielectric materials having low dielectric constants useful in electronic component manufacture along with methods of preparing the porous organo polysilica dielectric materials. Also, provided are methods of forming electronic devices containing such porous organo polysilica dielectric materials without the use of antireflective coatings. CONSTITUTION: The composition useful for forming porous organo polysilica dielectric material, comprises removable porogen, wherein the porogen comprises one or more chromophores. The one or more chromophores(formula 1) are selected from monomers containing phenyl, substituted phenyl, naphthyl, substituted naphthyl, anthracenyl, substituted anthracenyl, phenanthrenyl, substituted phenanthrenyl, and one or more (C4-C24)alkyl groups. In the formula 1, R is H or CH3, and R is selected from phenyl, benzyl, the formula (a).
다공성 유기 폴리실리카 유전물질을 제조하는 방법과 함께 전자 부품의 제조에 유용한 낮은 유전상수를 가진 유기 폴리실리카 유전물질이 개시된다. 또한 반사방지 코팅을 사용하지 않고 이러한 다공성 유기 폴리실리카 유전물질을 함유한 전자 디바이스(electronic device)를 형성하는 방법이 개시된다. |
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Bibliography: | Application Number: KR20010062495 |