REPAIR CIRCUIT OF FLASH MEMORY DEVICE

PURPOSE: A repair circuit of flash memory device is provided to minimize impossibility of a device operation owing to defectiveness of protection cells by reading information stored in a repair cell according to repaired information. CONSTITUTION: A protection circuit(1) disables protection cell sec...

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Bibliographic Details
Main Author KIM, UI SEOK
Format Patent
LanguageEnglish
Korean
Published 17.04.2002
Edition7
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE: A repair circuit of flash memory device is provided to minimize impossibility of a device operation owing to defectiveness of protection cells by reading information stored in a repair cell according to repaired information. CONSTITUTION: A protection circuit(1) disables protection cell sectors at repairing a defective protection cell with a repair cell, and a repair information storing circuit(2) stores repair information of the detective protection cell. The protection circuit(1) comprises a decoder(3) for decoding an address(ADD) of a selected protection cell and a plurality of protection cell sectors(4) having repair cells(5). An address(ADD) and a repair signal(REP) are supplied to the protection circuit(1) and the repair information storing circuit(2).
Bibliography:Application Number: KR20000059509