Process for polishing silicon wafers

• Main Authors: HEIER GERHARD, WENSKI GUIDO, ALTMANN THOMAS, WINKLER WOLFGANG
• Format: Patent
• Language: English; Korean
• Published: 28.03.2002
• Edition: 7
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; TRANSPORTING

PURPOSE: A process for polishing silicon wafers is provided to have lower roughness and defect rates on the polished surfaces. CONSTITUTION: A process for the chemical-mechanical polishing of silicon wafers is provided by rotational movement of the silicon surface which is to be polished on a polishing plate which is covered with polishing cloth, with a continuous supply of an alkaline polishing agent which contains abrasives, at least 2 μm of material being removed from the polished silicon surface during the polishing. Immediately after the polishing has finished, and while maintaining the rotational movement, instead of the polishing agent at least two different stopping agents are supplied in succession, each removing less than 0.5 μm of material from the polished silicon surface. 본 발명은 연마제를 함유한 알칼리연마제의 연속적공급으로 연마포로 덮혀진 연마판에서 연마될 실리콘면의 회전운동에 의하여 실리콘웨이퍼를 화학기계적연마하는 방법에 관한 것이며, 적어도 2㎛의 물질이 연마시 연마실리콘면에서 제거되며, 연마 종료후 즉시 회전운동을 유지하면서 연마제 대신에 적어도 2개의 다른 정지제가 연속적으로 공급되어, 매번 0.5㎛이하의 물질이 연마실리콘면에서 제거되는 것을 특징으로 한다.