TOROIDAL PLASMA SOURCE FOR PLASMA PROCESSING

• Main Authors: LOEWENHARDT PETER, LANE CHRISTOPER T, COX MICHAEL S, WANAMAKER DAVID P, PARKS JOHN, LAI CANFENG, MAJEWSKI ROBERT B, SHAMOUILIAN SHAMOUIL
• Format: Patent
• Language: English; Korean
• Published: 15.01.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR RELEVANT APPARATUS; TRANSPORTING

PURPOSE: A toroidal plasma source used for a plasma processing is provided to enhance a uniformity of the plasma processing by controlling a plasma density and to reduce a sputtering erosion of inner walls. CONSTITUTION: Plasma processing system(10) includes a chamber(12) having a chamber body(14) and a chamber top(16), a vacuum system(18), an RF generator (power supply)(20) coupled to a toroidal core(22) by leads(24, 26) by a coil. In one embodiment the toroidal core(22) is a ferrite core, but could be other magnetic material, or merely free space ("air") depending on the coupling structure. A bias plasma system(30) is optional for producing movement in the plasma normal to the surface(32) of a substrate(34). The substrate could be a silicon wafer, for example, or other substrate. For ease of description, the surface(32) will be referred to as the "process surface" of the substrate. It is understood that the process surface may include layers and structures previously formed on the substrate. In certain embodiments, the wafer is a silicon wafer with a nominal diameter of 200 mm or 300 mm. 본 발명은 기판 프로세싱 챔버(10) 내의 토로이드형 플라즈마 소스(28)에 관한 것이다. 토로이드형 플라즈마 소스는 쎄타(theta) 대칭을 가진 폴로이드형 플라즈마를 형성한다. 폴로이들(poloidal) 플라즈마 전류는 플라즈마 발생 구조의 표면에 본질적으로 평행하고, 그리하여 내벽들의 스퍼터링 부식을 감소시킨다. 플라즈마 전류는 이와 유사하게 챔버 내에서 기판(34)의 프로세스 표면(32)에 본질적으로 평행하다. 또 다른 실시예에서, 기판과 플라즈마 소스 사이의 형상 부재(shaped member)는 플라즈마 프로세싱 균일성을 강화하기 위해 선택된 방식으로 플라즈마 밀도를 제어한다.