DC OR AC ELECTRIC FIELD ASSISTED ANNEAL

• Main Authors: SLINKMAN JAMES ALBERT, ELLIS-MONAGHAN JOHN J, BALLANTINE ARNE W, GILBERT JEFFREY D, FURUKAWA TOSHIHARU, MILLER GLENN R
• Format: Patent
• Language: English; Korean
• Published: 03.11.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method and apparatus of foming a junction profile are provided to increase the total diffusion of the single wafer process while keeping the same thermal profile would be desirable. CONSTITUTION: At least one dopant is introduced into a semiconductor substrate. The at least one dopant is...