Air-tight vessel equipped with gas feeder uniformly supplying gaseous component around plural wafers

• Main Author: NAGAKURA YUTAKA
• Format: Patent
• Language: English; Korean
• Published: 29.10.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; BLASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FURNACES; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; HEATING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; KILNS; LIGHTING; MECHANICAL ENGINEERING; METALLURGY; OPEN SINTERING OR LIKE APPARATUS; OVENS; RETORTS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; WEAPONS

PURPOSE: To make thickness and concentration of a film formed on a wafer surface uniform by eliminating pressure gradient of the gas ejected from each ejecting hole of a gas feed pipe in a diffusion furnace. CONSTITUTION: This vertical type diffusion furnace, has a gas feed pipe 8A, in which a plurality of gas ejecting holes 9 of a same hole diameter are arranged at equal intervals, where the gas feed pipe 8A has such structure as the cross sectional area of the gas feed pipe 8A becomes smaller as the position shifts from the lowest end (base bottom), where gas feed opening is located to the upper end (top end). 화학증기증착시스템의 반응로는 소정간격으로 웨이퍼보트(5)에 의해 지지된 다수의 반도체웨이퍼들(6)에 도핑가스를 불어 넣기 위한 가스공급기(8A)를 구비하고 있고, 이 가스공급기(8A)는 단면이 점차 감소되는 가스통로 및 반도체웨이퍼들(6) 둘레에 도핑가스농도를 실질적으로 일정하게 유지하기 위하여 웨이퍼보트(5)를 따라 배열되고 직경이 동일한 가스출구구멍들(9)을 가지며, 따라서 모든 반도체웨이퍼들(6)상의 증착된 물질에 불순물이 균일하게 도입된다.