SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

PURPOSE: A semiconductor device is provided to control fluctuations of a current amplification ratio in the surface of a wafer of a low voltage transistor, and to form a low voltage transistor and a high voltage transistor by a simple process. CONSTITUTION: The low voltage transistor and the high vo...

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Bibliographic Details
Main Authors YAMASHITA YASUNORI, SATO KIMITOSHI, ONODA HIROSHI, YAMAMOTO FUMITOSHI
Format Patent
LanguageEnglish
Korean
Published 19.10.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A semiconductor device is provided to control fluctuations of a current amplification ratio in the surface of a wafer of a low voltage transistor, and to form a low voltage transistor and a high voltage transistor by a simple process. CONSTITUTION: The low voltage transistor and the high voltage transistor are formed on a main surface of the semiconductor substrate. A field insulation layer(12) is formed on the main surface of the semiconductor substrate. The first impurity region(2b) for a base(3) is of the first conductivity type, formed on the main surface of one side and the other side to which at least a part of the field insulation layer is inserted. The first impurity region for an emitter(4) is of the second conductivity type, formed on the main surface of the other side. The second impurity region(2a) for the base is formed under the field insulation layer, positioned between the first impurity region for the base and the first impurity region for the emitter.
Bibliography:Application Number: KR20000070209