ONE-PIECE DUAL GAS FACEPLATE FOR SHOWERHEAD IN SEMICONDUCTOR WAFER PROCESSING SYSTEM

• Main Authors: CHIAO STEVE H, LEI LAWRENCE C, NGUYEN ANH N, UMOTOY SALVADOR P
• Format: Patent
• Language: English; Korean
• Published: 18.10.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE: A one-piece dual gas faceplate is to provide at least two gases to the process region without commingling the gases prior to reaching the process region and without using O-rings to seal the gases into the showerhead. CONSTITUTION: A plurality of first gas holes are extended through the one-piece gas distribution faceplate between the first surface and the second surface. The one-piece gas distribution faceplate having an internal gas distribution cavity is defined by a plurality of interconnecting channels. A plurality of second gas holes are extended through the one-piece gas distribution faceplate between the first surface into a plurality of interconnecting channels. The interconnecting channels are fluidly coupled to a plenum that is in turn connected to at least one gas conduit. The gas conduit extends to the third surface.