METHOD OF DEPOSITING AN AMORPHOUS CARBON LAYER
PURPOSE: A method for forming an amorphous carbon layer is provided to thermally decompose a gas mixture comprising a hydrocarbon compound and an inert gas. CONSTITUTION: Illustrated the completion of the integrated circuit fabrication sequence by the transfer of the pattern defined in the amorphous...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Korean |
Published |
15.09.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE: A method for forming an amorphous carbon layer is provided to thermally decompose a gas mixture comprising a hydrocarbon compound and an inert gas. CONSTITUTION: Illustrated the completion of the integrated circuit fabrication sequence by the transfer of the pattern defined in the amorphous carbon layer through the silicon dioxide layer using the amorphous carbon layer as a hard mask. After the silicon dioxide layer is patterned, the amorphous carbon layer can optionally be stripped from the substrate by etching it in an ozone, oxygen or ammonia plasma. In a specific example of a fabrication sequence, the pattern defined in the amorphous carbon hard mask can be incorporated into the structure of the integrated circuit, such as a damascene structure. Damascene structures are typically used to form metal interconnects on integrated circuits.
본 발명은 비정질 탄소막을 이용하여 집적회로는 형성하는 방법에 관한 것이다. 비정질 탄소막은 탄화수소 화합물 및 불활성 가스를 포함하는 가스 혼합물을 열적으로 분해함으로써 형성된다. 비정질 탄소막은 집적 회로 제조 공정들과 호환적이다. 한 집적 회로 제조 공정에서, 비정질 탄소막은 하드마스크로서 이용된다. 또다른 집적 회로 제조 공정에 있어서, 비정질 탄소막은 DUV 리소그라픽을 위한 무반사 코팅(ARC)이다. 또 다른 집적 회로 제조 공정에서, 다층 비정질 탄소 무반사 코팅이 DUV 리소그라픽을 위해 사용된다. |
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Bibliography: | Application Number: KR20010007741 |