HYBRID DIELECTRIC STRUCTURE FOR IMPROVING STIFFNESS OF BACK-END-OF-THE LINE STRUCTURE

PURPOSE: A hybrid dielectric structure is provided to improve stiffness of a back-end-of-the line(BEOL) structure, by using dual materials having low dielectric constant including a copper damascene interconnection part. CONSTITUTION: A planar line layer includes a plurality of interconnection condu...

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Main Authors HEDRICK JEFFREY CURTIS, JAHNES CHRISTOPHER, NYE HENRY, MCGAHAY VINCENT, EDELSTEIN DANIEL CHARLES, HAY JOHN C, DAVIS CHARLES R
Format Patent
LanguageEnglish
Korean
Published 07.09.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE: A hybrid dielectric structure is provided to improve stiffness of a back-end-of-the line(BEOL) structure, by using dual materials having low dielectric constant including a copper damascene interconnection part. CONSTITUTION: A planar line layer includes a plurality of interconnection conductive materials separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A planar via layer is composed of a dielectric layer(26) having an elastic modulus higher than that of the line layer and conductive via(28) penetrating the dielectric layer. One of the line layer and the via layer is formed on an integrated circuit substrate(16), defining the first layer. The other of the line layer and the via layer is formed on the first layer so that the vias are selectively in contact with the line layer.
Bibliography:Application Number: KR20010007178