WRITE-IN METHOD FOR NON-VOLATILE SEMICONDUCTOR MULTI- LEVEL MEMORY

PURPOSE: To realize high speed write-in and high reliability in a non-volatile multi-level memory. CONSTITUTION: In a non-volatile semiconductor memory in which information of a multi-level is stored in one memory cell by setting plural threshold values, write-in (write-n 1) for a threshold value be...

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Bibliographic Details
Main Authors KURATA HIDEAKI, KOBAYASHI NAOKI, SAEKI SHUNICHI, KOBAYASHI TAKASHI, KIMURA KATSUTAKA
Format Patent
LanguageEnglish
Korean
Published 25.07.2001
Edition7
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE: To realize high speed write-in and high reliability in a non-volatile multi-level memory. CONSTITUTION: In a non-volatile semiconductor memory in which information of a multi-level is stored in one memory cell by setting plural threshold values, write-in (write-n 1) for a threshold value being the farthest from an erasing state is performed previous to write-in for the other threshold value, write-in for the other threshold value is performed successively from data having a value being near an erasion state, also, at the time of write-in of each case, write-in is performed simultaneously for a cell in which data of a threshold value being far from an erasion state (write-in 2, write-in 3).
Bibliography:Application Number: KR20000062581