METHOD FOR MANUFACTURING CONDUCTIVE THIN FILM PATTERN SUBSTRATE

PURPOSE: A method of manufacturing conductive thin film pattern substrate is provided to manufacture s substrate using a process which does not need bothersome post-treatment, gets on along with environment, costs low, and to form a pattern of SnSbO thin film with ease, which has a high mechanical a...

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Bibliographic Details
Main Authors ITO SHIGEO, YAMAURA TATSUO
Format Patent
LanguageEnglish
Korean
Published 12.07.2001
Edition7
Subjects
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Summary:PURPOSE: A method of manufacturing conductive thin film pattern substrate is provided to manufacture s substrate using a process which does not need bothersome post-treatment, gets on along with environment, costs low, and to form a pattern of SnSbO thin film with ease, which has a high mechanical and chemical strength and is favorable as a transparent conductive film. CONSTITUTION: A thin film of InSnO series, SnSbO series, ZnAlO series or Al thin film(2) is formed on a substrate made of insulating glass or so, and a film of a glass paste(3) of low softening point which is phosphoric acid series is formed on the thin film. Constitutional component of the thin film which are contacted with the insulation layer formed of low softening point glass of the phosphoric acid series are melt and become insulation layer region(4), and the conductive thin film region can be patterned as electrodes. (과제) 종래와 같이 귀찮은 후처리가 불필요하고, 환경에도 우아한 로코스트한 프로세스로 기판을 작성한다. 더욱더, 기계적, 화학적 강도가 크고 투명도전막으로서 유망한 SnSbO 박막을 용이하게 패턴형성할 수 있도록 한다. (해결수단) 절연성을 갖는 글라스 등의 기판상에 InSnO계, SnSbO계, ZnAlO계 또는 Al의 박막을 형성하고, 상기 박막위에 인산계의 저연화점 글라스 페이스트를 성막한다. 전기인산계의 저연화점 글라스 페이스트로 이루어지는 절연층과 접하는 영역의 상기 박막의 구성성분이 글라스영역에 용해하여 절연층 영역이 형성되고, 도전성 박막 영역을 전극으로서 패터닝할 수가 있다.
Bibliography:Application Number: KR20000060585