METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE HAVING A STABLE CRYSTALLINE INTERFACE WITH SILICON

• Main Authors: RAMDANI JAMAL, WANG JUN, DROOPAD RAVINDRANATH, YU ZHIYI JIMMY
• Format: Patent
• Language: English; Korean
• Published: 07.07.2001
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE: A method for fabricating semiconductor structure is provided to form a thin and stable crystalline interface on a silicon substrate. CONSTITUTION: The method of manufacturing a semiconductor structure is consist of a stage that a silicon substrate(10) having the surface(12) is provided, a stage that an interface(14) with a single silicon atomic layer, a single nitrogen atomic layer and a single metal atomic layer is formed on the surface of the substrate(10) and a stage that more than one layer of single crystal oxide layers(26) are formed on the interface. The interface consists of a silicon atomic layer, a nitrogen atomic layer and a metal atomic layer. 반도체 구조를 제작하기 위한 방법은 표면(12)을 구비한 실리콘 기판(10)을 제공하는 단계와, 실리콘, 질소, 및 금속으로 이루어진 단일 원자 층을 포함하는 경계면(14)을 실리콘 기판의 표면 위에 형성하는 단계와, 경계면 위에 단결정 산화물로 이루어진 하나 이상의 층(26)을 형성하는 단계를 포함한다. 경계면은 MSiN형태의 실리콘, 질소, 및 금속으로 이루어진 원자 층을 포함하는데, 여기서 M은 금속이다. 제 2 실시예에서, 경계면은 MSi[NO]형태의 실리콘, 금속, 및 질소와 산소의 혼합물로 이루어진 원자 층을 포함하는데, 여기서 M은 금속이고, X는 0≤X＜1이다.