METHOD FOR FORMING DEVICE ISOLATION LAYER OF SEMICONDUCTOR DEVICE

• Main Authors: JUNG, JAE GWAN, KIM, YEONG SEOK
• Format: Patent
• Language: English; Korean
• Published: 06.07.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE: A method for forming a device isolation layer of a semiconductor device is provided to ion-inject impurities on an upper portion of a trench before performing a trench etching to form an impurity injection region to prevent the characteristic of the device from being degenerated. CONSTITUTION: The semiconductor device isolation layer forming method includes following steps. At first, an accumulated structure of a pad oxide layer and a pad nitride layer is formed on a semiconductor substrate and is patterned by using a device isolation mask. Then, impurities is ion-injected to the semiconductor substrate by using the accumulated structure as a mask and the impurities are diffused along with the sidewalls to form an impurity injection region(37) by a thermal process. At third, the semiconductor substrate is etched by using the accumulated structure as a mask to form a trench and the impurity injection region is provided on the sidewall of the trench. At forth, the device isolation layer(41) burying the trench is formed and the accumulated structure is removed. At last, a gate electrode(43) is pattern along with the device isolation layer and the upper portion of an active region and the impurity injection region is provided on the lower portion of the gate electrode.